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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12538714 B1

PDFFull Text
Date of Patent:
Jan. 27, 2026

Filed:

Jul. 27, 2023

Magneto-resistive random access memory with laterally-recessed free layer

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Oscar Van Der Straten, Guilderland Center, NY (US);

Koichi Motoyama, Clifton Park, NY (US);

Kenneth Chun Kuen Cheng, Shatin, HK;

Joseph F. Maniscalco, Lake Katrine, NY (US);

Chih-Chao Yang, Glenmont, NY (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorney:

David K. Mattheis

Primary Examiner:

Jami Valentine Miller

Int. Cl.
CPC ...
H10N 50/10 (2023.01); G11C 11/16 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01);
U.S. Cl.
CPC ...
H10N 50/10 (2023.02); G11C 11/161 (2013.01); H10B 61/00 (2023.02); H10N 50/01 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02);
Abstract

A method of forming a memory device with a laterally-recessed free layer includes forming a bottom electrode above an electrically conductive structure embedded within an interconnect dielectric material. A magnetic tunnel junction stack is formed above the bottom electrode. Forming the magnetic tunnel junction stack includes forming a magnetic reference layer above the bottom electrode, forming a tunnel barrier layer above the magnetic reference layer, and forming a magnetic free layer above the tunnel barrier layer. Opposed lateral portions of the magnetic free layer are recessed, and sidewall spacers are formed on the recessed opposed lateral portions of the magnetic free layer for confining an active region of the memory device formed by the magnetic free layer and the tunnel barrier layer.

Find Patent Forward Citations

Van Der Straten, Oscar. (2026). Magneto-resistive random access memory with laterally-recessed free layer (U.S. Patent No. 12538714). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12538714

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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