The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2026

Filed:

Jul. 27, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Lin-Yu Huang, Hsinchu, TW;

Li-Zhen Yu, New Taipei, TW;

Chia-Hao Chang, Hsinchu, TW;

Cheng-Chi Chuang, New Taipei, TW;

Yu-Ming Lin, Hsinchu, TW;

Chih-Hao Wang, Baoshan Township, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/762 (2006.01); H01L 23/522 (2006.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H01L 21/76879 (2013.01); H01L 21/762 (2013.01); H01L 21/76802 (2013.01); H01L 23/5226 (2013.01); H10D 84/0158 (2025.01); H10D 84/038 (2025.01);
Abstract

The present disclosure describes a method for forming an interconnect structure. The method can include forming a first layer of insulating material on a substrate, forming a via recess within the layer of insulating material, filling the via recess with a layer of conductive material, selectively growing a second layer of insulating material over the first layer of insulating material, and opening the second layer of insulating material to the layer of conductive material while growing the second layer of insulating material.


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