The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2026
Filed:
Sep. 30, 2022
Applicant:
Ji Hua Laboratory, Guangdong, CN;
Inventors:
Zhaoming He, Foshan, CN;
Hai Bi, Foshan, CN;
Jiangwei Duan, Foshan, CN;
Wei Wang, Foshan, CN;
Wanli Yang, Foshan, CN;
Assignee:
JI HUA LABORATORY, Guangdong, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/88 (2006.01); G01N 21/63 (2006.01); G01N 21/64 (2006.01); G01N 21/95 (2006.01); G01N 25/72 (2006.01); G06T 7/00 (2017.01); H01L 21/66 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
G01N 21/6489 (2013.01); G01N 21/63 (2013.01); G01N 21/6456 (2013.01); G01N 21/8851 (2013.01); G01N 21/9505 (2013.01); G01N 25/72 (2013.01); G06T 7/0004 (2013.01); H01L 21/67288 (2013.01); H01L 22/12 (2013.01); H01L 22/20 (2013.01); G01N 2021/8864 (2013.01); G01N 2021/8887 (2013.01); G01N 2201/1296 (2013.01); G06T 2207/20021 (2013.01); G06T 2207/30148 (2013.01); Y02P 90/30 (2015.11);
Abstract
A defect detection method includes: acquiring a photoluminescence detection result of a wafer to be detected; generating a defect heat map corresponding to said wafer according to the photoluminescence detection result and a preset heat map model, the preset heat map model being constructed on the basis of a photoluminescence detection result sample after electroluminescent defect marking; and determining a defect detection result of said wafer according to the defect heat map.