The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
Jul. 11, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Cheng-Ying Ho, Minxiong Township, TW;
Wen-De Wang, Minsyong Township, TW;
Keng-Yu Chou, Kaohsiung, TW;
Kai-Chun Hsu, Yonghe, TW;
Tzu-Hsuan Hsu, Kaohsiung, TW;
Jen-Cheng Liu, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Various embodiments of the present disclosure are directed towards an image sensor having a photodetector disposed within a semiconductor substrate. A dielectric structure is disposed on a first side of the semiconductor substrate. An isolation structure extends from the dielectric structure into the first side of the semiconductor substrate. The isolation structure laterally wraps around the photodetector and comprises an upper portion disposed above the first side of the semiconductor substrate and directly contacting sidewalls of the dielectric structure. The isolation structure comprises a first material different from a second material of the dielectric structure.