The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2025
Filed:
Jul. 28, 2023
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Qiwei Wang, Shanghai, CN;
Tao Liu, Shanghai, CN;
Zhigang Zhang, Shanghai, CN;
Yaoyu Zhan, Shanghai, CN;
Haoyu Chen, Shanghai, CN;
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Abstract
The present application discloses an MV device, wherein a first gate structure of the MV device is formed by stacking a first gate dielectric layer and a first gate conductive material layer. The first gate dielectric layer is divided into a body gate dielectric layer and an edge gate dielectric layer. The body gate dielectric layer is located in a middle region, and the edge gate dielectric layer surrounds the periphery of the body gate dielectric layer. A channel region is located in a surface of the semiconductor substrate between the lightly doped drain regions on the two sides of the first gate structure. In a channel length direction, the top of the channel region is covered by the body gate dielectric layer. The present application also discloses a method for manufacturing the MV device.