The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 23, 2025

Filed:

Jul. 31, 2023
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Dung Viet Nguyen, San Jose, CA (US);

Patrick R. Khayat, San Diego, CA (US);

Sivagnanam Parthasarathy, Carlsbad, CA (US);

Zhengang Chen, San Jose, CA (US);

Dheeraj Srinivasan, San Jose, CA (US);

Assignee:

Micron Technology Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 16/26 (2006.01); G11C 16/32 (2006.01); G11C 29/52 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 16/32 (2013.01); G11C 29/52 (2013.01);
Abstract

Described are memory devices producing metadata characterizing the applied read voltage level with respect to voltage distributions. An example memory sub-system comprises: a memory device comprising a plurality of memory cells; and a controller coupled to the memory device, the controller to perform operations comprising: performing, using a read voltage level, a read strobe with respect to a subset of the plurality of memory cells; and receiving, from the memory device, one or more metadata values characterizing the read voltage level with respect to threshold voltage distributions of the subset of the plurality of memory cells, wherein the one or more metadata values reflect a conductive state of one or more bitlines connected to the subset of the plurality of memory cells.


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