The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 16, 2025

Filed:

Feb. 25, 2022
Applicant:

Ebara Corporation, Tokyo, JP;

Inventors:

Toshimitsu Sasaki, Tokyo, JP;

Keita Yagi, Tokyo, JP;

Yoichi Shiokawa, Tokyo, JP;

Assignee:

EBARA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B24B 37/013 (2012.01); B24B 37/32 (2012.01); B24B 49/04 (2006.01); B24B 49/10 (2006.01); B24B 49/12 (2006.01); B24B 49/16 (2006.01);
U.S. Cl.
CPC ...
B24B 37/013 (2013.01); B24B 37/32 (2013.01); B24B 49/04 (2013.01); B24B 49/105 (2013.01); B24B 49/12 (2013.01); B24B 49/16 (2013.01);
Abstract

A polishing apparatus capable of obtaining a desired film thickness profile is disclosed. The polishing apparatus includes: a polishing unit; a film thickness measuring device for measuring a film thickness profile of a substrate; and a controller for controlling at least operations of the polishing unit and the film thickness measuring device. The controller stores in advance a response model which is created by taking into consideration variation in an amount of polishing between monitored areas of the substrate due to variations in a pressure of a pressurized fluid supplied to each of pressure chambers. Further, the controller obtains a film thickness profile of the substrate before polishing by use of a film thickness measuring device, and causes the substrate to be polished with an optimized polishing recipe created based on the response model and a target polishing amount, which is a difference between the film thickness profile of the substrate before polishing and the target film thickness of the substrate. A next substrate is polished with a new optimized polishing recipe which is created based on a target polishing amount of the next substrate and a response model corrected by use of the optimized polishing recipe and film thickness profiles of the substrate before and after polishing.


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