The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2025

Filed:

Dec. 19, 2022
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chien-Hsun Chen, Zhutian Township, TW;

Jiun Yi Wu, Zhongli, TW;

Chien-Hsun Lee, Chu-tung Town, TW;

Chung-Shi Liu, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/56 (2006.01); H01L 25/10 (2006.01);
U.S. Cl.
CPC ...
H01L 24/25 (2013.01); H01L 21/568 (2013.01); H01L 24/24 (2013.01); H01L 24/82 (2013.01); H01L 25/105 (2013.01); H01L 2224/214 (2013.01); H01L 2224/24011 (2013.01); H01L 2224/24137 (2013.01); H01L 2224/25171 (2013.01); H01L 2224/25174 (2013.01); H01L 2224/25177 (2013.01); H01L 2224/82005 (2013.01); H01L 2224/82951 (2013.01); H01L 2225/1058 (2013.01);
Abstract

A method includes placing a package component over a carrier, encapsulating the package component in an encapsulant, and forming a connection structure over and electrically coupling to the package component. The formation of the connection structure includes forming a first via group over and electrically coupling to the package component, forming a first conductive trace over and contacting the first via group, forming a second via group overlying and contacting the first conductive trace, wherein each of the first via group and the second via group comprises a plurality of vias, forming a second conductive trace over and contacting the second via group, forming a top via overlying and contacting the second conductive trace, and forming an Under-Bump-Metallurgy (UBM) over and contacting the top via.


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