The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2025
Filed:
Aug. 19, 2022
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Tung-Liang Shao, Hsinchu, TW;
Yu-Sheng Huang, Hemei Township, TW;
Kuo Yang Wu, Taoyuan, TW;
Chen-Hua Yu, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/367 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 23/373 (2006.01); H01L 23/44 (2006.01); H01L 23/498 (2006.01); H01L 25/065 (2023.01);
U.S. Cl.
CPC ...
H01L 23/3675 (2013.01); H01L 21/4882 (2013.01); H01L 23/3677 (2013.01); H01L 23/3735 (2013.01); H01L 23/44 (2013.01); H01L 23/49816 (2013.01); H01L 23/49822 (2013.01); H01L 23/49833 (2013.01); H01L 23/49838 (2013.01); H01L 24/08 (2013.01); H01L 24/16 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 25/0655 (2013.01); H01L 2224/08235 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/29187 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73253 (2013.01); H01L 2924/16196 (2013.01); H01L 2924/16235 (2013.01); H01L 2924/1632 (2013.01); H01L 2924/16587 (2013.01); H01L 2924/182 (2013.01); H01L 2924/3511 (2013.01);
Abstract
In an embodiment, a package is provided. The package includes a semiconductor device; an encapsulant laterally surrounding the semiconductor device; and a heat dissipation structure disposed over the semiconductor device and the encapsulant, wherein the heat dissipation structure includes a plurality of pillars and a porous layer extending over sidewalls of the plurality of pillars.