The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2025
Filed:
Jun. 15, 2021
Intel Corporation, Santa Clara, CA (US);
Leonard P. Guler, Hillsboro, OR (US);
Biswajeet Guha, Hillsboro, OR (US);
Tahir Ghani, Portland, OR (US);
Tsuan-Chung Chang, Portland, OR (US);
Sean Pursel, Hillsboro, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Fin cuts in neighboring gate and source or drain regions for advanced integrated circuit structure fabrication is described. For example, an integrated circuit structure includes a horizontal stack of semiconductor nanowire portions. A dielectric gate spacer is vertically over the horizontal stack of semiconductor nanowire portions. A gate isolation structure is laterally adjacent to a first side of the horizontal stack of semiconductor nanowire portions. A source or drain isolation structure is laterally adjacent to a second side of the horizontal stack of semiconductor nanowire portions.