The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2025
Filed:
Nov. 20, 2020
Applicants:
Nippon Micrometal Corporation, Saitama, JP;
Nippon Steel Chemical & Material Co., Ltd., Tokyo, JP;
Inventors:
Ryo Oishi, Saitama, JP;
Daizo Oda, Saitama, JP;
Noritoshi Araki, Saitama, JP;
Kota Shimomura, Saitama, JP;
Tomohiro Uno, Tokyo, JP;
Tetsuya Oyamada, Tokyo, JP;
Assignees:
NIPPON MICROMETAL CORPORATION, Saitama, JP;
NIPPON STEEL Chemical & Material Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); C22F 1/08 (2006.01);
U.S. Cl.
CPC ...
H01L 24/45 (2013.01); H01L 2224/45147 (2013.01); H01L 2924/01203 (2013.01); H01L 2924/20751 (2013.01); H01L 2924/20752 (2013.01); H01L 2924/20753 (2013.01); H01L 2924/20754 (2013.01); H01L 2924/20755 (2013.01); H01L 2924/20756 (2013.01); H01L 2924/20757 (2013.01); H01L 2924/20758 (2013.01); H01L 2924/20759 (2013.01); H01L 2924/2076 (2013.01);
Abstract
There is provided a copper bonding wire having an improved storage life in the atmosphere. There is specifically provided a copper bonding wire for semiconductor devices characterized in that a density of crystal grain boundary on a surface of the wire is 0.6 (μm/μm) or more and 1.6 (μm/μm) or less.