The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 28, 2025

Filed:

Sep. 29, 2022
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Fumiya Takata, Miyagi, JP;

Shota Yoshimura, Miyagi, JP;

Shinya Morikita, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01J 37/32091 (2013.01); H01L 21/02175 (2013.01); H01L 21/02252 (2013.01); H01L 21/67063 (2013.01);
Abstract

An etching method includes preparing a substrate including a first region containing a first material and a second region containing a second material different from the first material; and etching the second region with a plasma generated from a processing gas containing a tungsten-containing gas. In the etching, a flow rate of the tungsten-containing gas is the largest among all gases contained in the processing gas except for an inert gas.


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