The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
Aug. 04, 2021
Semes Co., Ltd., Chungcheongnam-do, KR;
Joun Taek Koo, Seoul, KR;
Seong Gil Lee, Gyeonggi-do, KR;
Wan Jae Park, Gyeonggi-do, KR;
Young Je Um, Busan, KR;
Dong Hun Kim, Seoul, KR;
Ji Hwan Lee, Incheon, KR;
Dong Sub Oh, Busan, KR;
Myoung Sub Noh, Gyeonggi-do, KR;
Du Ri Kim, Incheon, KR;
SEMES CO., LTD., Chungcheongnam-Do, KR;
Abstract
A method of fabricating a semiconductor device with improved electrical characteristics and reliability is provided. The method of fabricating the semiconductor device includes providing a substrate, in which a first oxide film, a nitride film, and a second oxide film are sequentially stacked, and a trench penetrating the first oxide film, the nitride film, and the second oxide film is formed, chamfering the oxide film exposed by the trench while removing a part of the nitride film exposed by the trench by using a first plasma process, and removing the nitride film left after the first plasma process by using a second plasma process.