The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
Feb. 15, 2023
Ict Integrated Circuit Testing Gesellschaft Für Halbleiterprüftechnik Mbh, Heimstetten, DE;
John Breuer, Munich, DE;
Dominik Patrick Ehberger, Ebersberg, DE;
Kathrin Mohler, Olching, DE;
Ivo Liska, Haar, DE;
Abstract
A method of forming a multipole device () for influencing an electron beam () is provided. The method is carried out in an electron beam apparatus () that comprises an aperture body () having at least one aperture opening (). The method comprises directing the electron beam () onto two or more surface portions of the aperture body () on two or more sides of the at least one aperture opening () to generate an electron beam-induced deposition pattern () configured to act as a multipole in a charged state, particularly configured to act as a quadrupole, a hexapole and/or an octupole. The electron beam-induced deposition pattern () can be an electron beam-induced carbon or carbonaceous pattern. Further provided are methods of influencing an electron beam in an electron beam apparatus, particularly with a multipole device as described herein. Further provided is a multipole device for influencing an electron beam in an electron beam apparatus in a predetermined manner.