The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2025

Filed:

Jun. 15, 2023
Applicant:

Kla Corporation, Milpitas, CA (US);

Inventors:

David Y. Wang, Santa Clara, CA (US);

Shankar Krishnan, Cupertino, CA (US);

Assignee:

KLA Corporation, Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/31 (2006.01);
U.S. Cl.
CPC ...
G01N 21/31 (2013.01); G01N 2201/06113 (2013.01);
Abstract

Methods and systems for performing spectroscopic ellipsometry measurements of semiconductor structures with reflective collection relay optics having demagnification from the spectrometer slit to the detector are presented herein. The demagnification effectively increases the NA at the detector and reduces the measurement spot size at the wafer imaged onto the detector. In this manner, the demagnification maintains high spectral resolution at the detector, particularly in the ultraviolet wavelength range, e.g., 120-400 nanometers, while maintaining a small collection NA at the wafer, e.g., collection NA less than 0.05. The small collection NA enables high fringe contrast, signal fidelity, and sensitivity, when measuring thick, multiple layer stacks, e.g., 200-300 layers.


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