The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 2025

Filed:

Dec. 19, 2022
Applicant:

Fei Company, Hillsboro, OR (US);

Inventors:

Zoltán Orémuš, Brno, CZ;

Lukáš Hübner, Jiříkovice, CZ;

Jaroslav Stárek, Olomouc, CZ;

Tomáš Onderlička, Brno, CZ;

Assignee:

FEI Company, Hillsboro, OR (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/305 (2006.01); H01J 37/28 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3056 (2013.01); H01J 37/28 (2013.01); H01J 2237/2802 (2013.01); H01J 2237/30466 (2013.01); H01J 2237/31745 (2013.01);
Abstract

Methods and apparatus are disclosed for determining a distance from a cut face of an active sample to a target plane, using data acquired from a reference sample. The active and reference samples have congruent structure, allowing reference data to be used as an index. An SEM image of the cut face is compared with the reference data to determine position within the active sample, and thereby the remaining distance to the target plane. The technique can be applied repeatedly between phases of ion beam milling until an endpoint at the target plane is reached. Consistent, accurate endpointing is achieved. The technique is suitable for preparing 5-100 nm thick lamella for TEM analysis of electronic circuits and can be used in a wide range of applications. Variations are disclosed.


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