The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 2025

Filed:

Jul. 15, 2022
Applicants:

Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;

Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;

Inventors:

Qiang Shu, Shanghai, CN;

Yingchun Zhang, Shanghai, CN;

Liusha Qin, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/00 (2012.01); G03F 1/80 (2012.01); G03F 7/00 (2006.01); H01L 21/033 (2006.01); H01L 21/33 (2006.01);
U.S. Cl.
CPC ...
G03F 1/00 (2013.01); G03F 1/80 (2013.01); H01L 21/0337 (2013.01); G03F 7/0035 (2013.01);
Abstract

A mask pattern for forming the semiconductor structure is provided. The mask pattern includes a first mask pattern and a second mask pattern. The first mask pattern includes a plurality of first target patterns, and the plurality of first target patterns are arranged along a first direction. The second mask pattern includes a plurality of second target patterns, and the plurality of second target patterns are arranged along the first direction. When the first mask pattern overlaps the second mask pattern, one of the plurality of first target patterns partially overlaps a corresponding one of the plurality of second target patterns.


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