The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 2025

Filed:

Dec. 09, 2022
Applicant:

Versum Materials Us, Llc, Tempe, AZ (US);

Inventors:

Manchao Xiao, San Diego, CA (US);

Raymond N. Vrtis, Carefree, AZ (US);

Robert Gordon Ridgeway, Chandler, AZ (US);

William R. Entley, Gilbert, AZ (US);

Jennifer Lynn Anne Achtyl, Chandler, AZ (US);

Xinjian Lei, Vista, CA (US);

Daniel P. Spence, Carlsbad, CA (US);

Assignee:

Versum Materials US, LLC, Tempe, AZ (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C07F 7/18 (2006.01); C07F 7/00 (2006.01); C23C 16/30 (2006.01); C23C 16/50 (2006.01);
U.S. Cl.
CPC ...
C07F 7/1804 (2013.01); C07F 7/00 (2013.01); C07F 7/1892 (2013.01); C23C 16/30 (2013.01); C23C 16/50 (2013.01);
Abstract

A composition, and chemical vapor deposition method, is provided for producing a dielectric film. A gaseous reagent including the composition is introduced into the reaction chamber in which a substrate is provided. The gaseous reagent includes a silicon precursor that includes a silicon compound according to Formula I as defined herein. Energy is applied to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents and to thereby deposit a film on the substrate. The film as deposited is suitable for its intended use without an optional additional cure step applied to the as-deposited film. A method for making the composition is also disclosed.


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