The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2025
Filed:
Jun. 08, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Fan Hu, Taipei, TW;
Wen-Chuan Tai, Hsinchu, TW;
Li-Chun Peng, Hsin-Chu, TW;
Hsiang-Fu Chen, Zhubei, TW;
Ching-Kai Shen, Zhubei, TW;
Hung-Wei Liang, New Taipei, TW;
Jung-Kuo Tu, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
The present disclosure relates to an integrated chip including a semiconductor device substrate and a plurality of semiconductor devices arranged along the semiconductor device substrate. A micro-electromechanical system (MEMS) layer overlies the semiconductor device substrate. The MEMS layer includes a first moveable mass and a second moveable mass. A capping layer overlies the MEMS layer. The capping layer has a first lower surface directly over the first moveable mass and a second lower surface directly over the second moveable mass. An outgas layer is on the first lower surface and directly between the first pair of sidewalls. A lower surface of the outgas layer delimits a first cavity in which the first moveable mass is arranged. The second lower surface of the capping layer delimits a second cavity in which the second moveable mass is arranged.