Semiconductor backside contact structure with increased contact area

Abstract

A semiconductor structure having a backside contact structure with increased contact area includes a plurality of source/drain regions within a field effect transistor, each of the plurality of source/drain regions includes a top portion having an inverted V-shaped area. A backside power rail is electrically connected to at least one source/drain region through a backside metal contact. The backside metal contact wraps around a top portion of the at least one source/drain region. A tip of the top portion of the plurality of source/drain regions points towards the backside power rail with the top portion of the at least one source/drain region being in electric contact with the backside metal contact. A first epitaxial layer is in contact with a top portion of at least another source/drain region adjacent to the at least one source/drain region for electrically isolating the at least another source/drain region from the backside power rail.