The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2025
Filed:
Dec. 20, 2021
International Business Machines Corporation, Armonk, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Veeraraghavan S. Basker, Schenectady, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Junli Wang, Slingerlands, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Embodiments herein describe semiconductor devices with single diffusion breaks that are narrower than the gates of transistors in those devices. That is, rather than forming the diffusion breaks using a dummy gate (which would result in the diffusion breaks having the same width as the gates of the transistors) the embodiments herein use different means to establish the width of the diffusion break. As a result, the diffusion break can be narrower than traditional diffusion breaks formed using dummy gates, thereby saving area in the semiconductor device.