The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2025
Filed:
Jun. 16, 2022
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Li-Wei Chu, New Taipei, TW;
Yu-Hsiang Liao, Hsinchu, TW;
Hung-Hsu Chen, Tainan, TW;
Chih-Wei Chang, Hsin-Chu, TW;
Ming-Hsing Tsai, Chu-Pei, TW;
Ying-Chi Su, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A semiconductor structure and a method for forming a semiconductor structure are provided. The semiconductor structure includes an epitaxial structure and a metal silicide layer. The epitaxial structure includes a semiconductor material. The metal silicide layer is disposed on the epitaxial structure. The metal silicide layer includes the semiconductor material, a first metal material and a second metal material. An atomic size of the first metal material is greater than an atomic size of the second metal material, and a concentration of the first metal material in the metal silicide layer varies along a thickness direction.