The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2025
Filed:
Aug. 28, 2020
Lam Research Corporation, Fremont, CA (US);
Matthew Scott Weimer, Portland, OR (US);
Ragesh Puthenkovilakam, Portland, OR (US);
Gordon Alex Macdonald, Sherwood, OR (US);
Shaoqing Zhang, Fremont, CA (US);
Shih-Ked Lee, Fremont, CA (US);
Jun Xue, Fremont, CA (US);
Samantha S. H. Tan, Newark, CA (US);
Xizhu Zhao, San Jose, CA (US);
Mary Anne Manumpil, Fremont, CA (US);
Eric A. Hudson, Berkeley, CA (US);
Chin-Jui Hsu, Portland, OR (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
Provided herein are methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate in a low pressure chamber using a dual frequency radio frequency component. Low pressure plasma enhanced chemical vapor deposition may be used to increase the etch selectivity of the AHM, permitting the use of a thinner AHM for semiconductor processing operations.