The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 30, 2025

Filed:

Jul. 18, 2023
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Cheng-Han Lin, Tainan, TW;

Chao-Ching Chang, Kaohsiung, TW;

Yi-Ming Lin, Tainan, TW;

Yen-Ting Chou, Tainan, TW;

Yen-Chang Chen, Tainan, TW;

Sheng-Chan Li, Tainan, TW;

Cheng-Hsien Chou, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 77/30 (2025.01); H10F 39/00 (2025.01); H10F 71/00 (2025.01); H10F 77/40 (2025.01);
U.S. Cl.
CPC ...
H10F 77/30 (2025.01); H10F 39/811 (2025.01); H10F 71/00 (2025.01); H10F 77/40 (2025.01);
Abstract

A device and method for fabricating the same is disclosed. For example, the device includes a sensor having a front side and a back side, a metal interconnect layer formed on the front side of the sensor, an anti-reflective coating formed on the back side of the sensor, a composite etch stop mask layer formed on the anti-reflective coating. wherein the composite etch stop mask layer includes a silicon nitride layer and a stressed layer. A percentage of Si—H bonds in the silicon nitride layer is greater than a percentage of Si—H bonds in the stressed layer.


Find Patent Forward Citations

Loading…