The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2025
Filed:
Nov. 28, 2023
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Shih-Chuan Chiu, Hsinchu, TW;
Tien-Lu Lin, Hsinchu, TW;
Yu-Ming Lin, Hsinchu, TW;
Chia-Hao Chang, Hsinchu, TW;
Chih-Hao Wang, Hsinchu, TW;
Jia-Chuan You, Taoyuan County, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/768 (2006.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 62/13 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10D 62/151 (2025.01); H01L 21/76871 (2013.01); H10D 30/024 (2025.01); H10D 30/62 (2025.01); H10D 64/017 (2025.01);
Abstract
A contact stack of a semiconductor device includes a source/drain feature, a silicide layer wrapping around the source/drain feature, a seed metal layer in direct contact with the silicide layer, and a conductor in contact with the seed metal layer. The contact stack excludes a metal nitride layer in direct contact with the silicide layer.