The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2025
Filed:
Dec. 07, 2021
International Business Machines Corporation, Armonk, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Reinaldo Vega, Mahopac, NY (US);
Yao Yao, Albany, NY (US);
Andrew M. Greene, Slingerlands, NY (US);
Veeraraghavan S. Basker, Schenectady, NY (US);
Pietro Montanini, Albany, NY (US);
Jingyun Zhang, Albany, NY (US);
Robert Robison, Rexford, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A nanosheet semiconductor device includes channel nanosheets each connected to a source/drain region that has a front surface, a rear surface, and an internal recess between the front surface and the rear surface. The device further includes a source/drain region contact in physical contact with the V shaped internal recess, with the front surface, and with the rear surface. The device may be fabricated by forming the source/drain region, recessing the source/drain region, and by forming a sacrificial source/drain region upon and around the recessed source/drain region. The sacrificial source/drain region may be removed and the source/drain region contact may be formed in place thereof.