The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2025
Filed:
Jan. 03, 2023
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Chih-Teng Liao, Hsinchu, TW;
Chih-Shan Chen, New Taipei, TW;
Yi-Wei Chiu, Kaohsiung, TW;
Chih Hsuan Cheng, Miaoli County, TW;
Tzu-Chan Weng, Kaohsiung, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device includes first and second fin active regions extruding from a substrate, where the first and second fin active regions are separated by an isolation feature. The semiconductor includes a first gate stack disposed on the first fin active region and a second gate stack disposed on the second fin active region. The semiconductor device includes first source/drain features formed on the first fin active region, second source/drain features formed on the second fin active region, and a dielectric layer disposed along sidewalls of the first fin active region but not along sidewalls of the second fin active region. The first source/drain features extend vertically into the first fin active region at a first depth, the second source/drain features extend vertically into the second fin active region at a second depth, and the first depth is greater than the second depth.