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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12431366 B1

PDFFull Text
Date of Patent:
Sep. 30, 2025

Filed:

Feb. 14, 2024

Structure having thermal dissipation structure therein and manufacturing method thereof

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chen-Hua Yu, Hsinchu, TW;

Yian-Liang Kuo, Hsinchu, TW;

Kuo-Chung Yee, Taoyuan, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Kretelia Graham

Assistant Examiner:

William Henry Anderson

Int. Cl.
CPC ...
H01L 23/367 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/522 (2006.01); H01L 23/538 (2006.01); H01L 23/64 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01); H01L 23/373 (2006.01);
U.S. Cl.
CPC ...
H01L 21/561 (2013.01); H01L 21/486 (2013.01); H01L 21/563 (2013.01); H01L 21/76898 (2013.01); H01L 23/3114 (2013.01); H01L 23/5223 (2013.01); H01L 23/5226 (2013.01); H01L 23/5383 (2013.01); H01L 23/642 (2013.01); H01L 24/05 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 23/367 (2013.01); H01L 23/3735 (2013.01); H01L 2224/023 (2013.01); H01L 2224/05026 (2013.01); H01L 2224/05552 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06548 (2013.01); H01L 2225/06589 (2013.01);
Abstract

A package structure includes a first thermal dissipation structure. The first thermal dissipation structure includes a semiconductor substrate, conductive vias, a thermal transmission structure, first capacitors, bonding pads, and bonding vias. The conductive vias are embedded in the semiconductor substrate. The thermal transmission structure is disposed over the semiconductor substrate and the conductive vias. The thermal transmission structure includes a conductive plane. The first capacitors are at least partially embedded in the thermal transmission structure. The bonding pads and the bonding vias are embedded in the thermal transmission structure. The bonding vias electrically connect the conductive vias and the bonding pads. The conductive plane is in physical contact with sidewalls of at least one of the bonding pads.

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