The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 30, 2025

Filed:

Apr. 11, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

I-Hsiung Huang, Hsinchu, TW;

Yung-Cheng Chen, Jhubei, TW;

Tung-Li Wu, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/00 (2006.01); B01D 39/20 (2006.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
G03F 7/70916 (2013.01); G03F 7/70033 (2013.01); B01D 39/2065 (2013.01); B82Y 40/00 (2013.01); G03F 7/70025 (2013.01);
Abstract

An extreme ultra violet (EUV) lithography apparatus includes a light source that generates an EUV light beam, a scanner that receives the light from a junction with the light source and directs the light to a reticle stage, and a debris catcher disposed on a EUV beam path between the light source and the scanner. The debris catcher includes a network membrane including a plurality of nano-fibers.


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