Semiconductor device and manufacturing method thereof

Abstract

A method for manufacturing a semiconductor device is provided. The method includes forming first and second semiconductor fins; forming first and second gate structures respectively over first regions of the first and second semiconductor fins; forming a first dummy spacer at a sidewall of the first gate structure adjacent a second region of the first semiconductor fin; etching a first source/drain recess in the second region of the first semiconductor fin; forming a n-type source/drain epitaxial structure in the first source/drain recess; forming a second dummy spacer at a sidewall of the second gate structure adjacent a second region of the second semiconductor fin, wherein the second dummy spacer has a thickness less than that of the first dummy spacer; etching a second source/drain recess in the second region of the second semiconductor fin; and forming a p-type source/drain epitaxial structure in the second source/drain recess.