The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2025
Filed:
May. 06, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/01 (2025.01); H10B 10/00 (2023.01); H10D 30/62 (2025.01); H10D 30/67 (2025.01); H10D 62/13 (2025.01); H10D 64/01 (2025.01); H10D 64/23 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6219 (2025.01); H10B 10/12 (2023.02); H10B 10/125 (2023.02); H10D 30/6729 (2025.01); H10D 30/6735 (2025.01); H10D 62/151 (2025.01); H10D 64/01 (2025.01); H10D 64/015 (2025.01); H10D 64/017 (2025.01); H10D 64/018 (2025.01); H10D 64/021 (2025.01); H10D 64/258 (2025.01); H10D 84/013 (2025.01); H10D 84/0147 (2025.01); H10D 84/0149 (2025.01); H10D 84/0158 (2025.01); H10D 84/038 (2025.01); H10D 84/83 (2025.01); H10D 84/834 (2025.01);
Abstract
A semiconductor device includes an active region that extends in a first horizontal direction. A source/drain component is disposed over the active region. A source/drain contact is disposed over the source/drain component. A gate structure is disposed over the active region. The gate structure extends in a second horizontal direction different from the first horizontal direction. Side surfaces of the source/drain contact are substantially more tapered in the second horizontal direction than in the first horizontal direction.