The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2025
Filed:
May. 06, 2022
Yangtze Memory Technologies Co., Ltd., Hubei, CN;
Yuancheng Yang, Hubei, CN;
Dongxue Zhao, Hubei, CN;
Tao Yang, Hubei, CN;
Lei Liu, Hubei, CN;
Di Wang, Hubei, CN;
Kun Zhang, Hubei, CN;
Wenxi Zhou, Hubei, CN;
Zhiliang Xia, Hubei, CN;
Zongliang Huo, Hubei, CN;
Yangtze Memory Technologies Co., Ltd., Hubei, CN;
Abstract
Embodiments of three-dimensional memory devices and fabricating methods thereof are disclosed. One disclosed method for forming a memory structure comprises: forming a bottom conductive layer on a substrate; forming a memory stack on the bottom conductive layer, the memory stack comprising a plurality of alternatively arranged dielectric layers and conductive layers; forming an opening penetrating the memory stack and exposing the bottom conductive layer; forming a cap layer on a bottom of the opening; forming a cylindrical body and a top contact on the cap layer and in the opening; and forming a plurality of interconnection structures to electrically connect the bottom conductive layer, the plurality of conductive layers of the memory stack, and the top contact.