The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 2025

Filed:

Aug. 08, 2023
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Cheng Hung Tsai, Hsinchu, TW;

Sheng-Kang Yu, Hsinchu, TW;

Shang-Chieh Chien, Hsinchu, TW;

Heng-Hsin Liu, Hsinchu, TW;

Li-Jui Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/00 (2006.01); G03F 7/20 (2006.01); G03F 7/22 (2006.01); G03F 7/36 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0035 (2013.01); G03F 7/2004 (2013.01); G03F 7/2026 (2013.01); G03F 7/22 (2013.01); G03F 7/36 (2013.01);
Abstract

A method includes: depositing a mask layer over a substrate; directing first radiation reflected from a central collector section of a sectional collector of a lithography system toward the mask layer according to a pattern; directing second radiation reflected from a peripheral collector section of the sectional collector toward the mask layer according to the pattern, wherein the peripheral collector section is vertically separated from the central collector section by a gap; forming openings in the mask layer by removing first regions of the mask layer exposed to the first radiation and second regions of the mask layer exposed to the second radiation; and removing material of a layer underlying the mask layer exposed by the openings.


Find Patent Forward Citations

Loading…