The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2025
Filed:
Mar. 25, 2022
International Business Machines Corporation, Armonk, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Julien Frougier, Albany, NY (US);
Nicolas Jean Loubet, Guilderland, NY (US);
Junli Wang, Slingerlands, NY (US);
Ruqiang Bao, Niskayuna, NY (US);
Min Gyu Sung, Latham, NY (US);
Heng Wu, Santa Clara, CA (US);
Oleg Gluschenkov, Tannersville, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor device includes a first semiconductor layer and a second semiconductor layer. The first semiconductor layer of the semiconductor device includes a standard-gate field-effect transistor. The second semiconductor layer of the semiconductor device includes an extended-gate field-effect transistor. The first semiconductor layer and the second semiconductor layer are formed on top of one another.