The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2025
Filed:
Sep. 17, 2021
Intel Corporation, Santa Clara, CA (US);
Prashant Majhi, San Jose, CA (US);
Brian S. Doyle, Portland, OR (US);
Van H. Le, Beaverton, OR (US);
Abhishek A. Sharma, Hillsboro, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Described herein are integrated circuit (IC) devices that include devices that include fin-based field-effect transistors (FinFETs) integrated over gate-all-around (GAA) transistors. The GAA transistors may serve to provide high-performance compute logic, and may be relatively low-voltage transistors, while FinFETs may be more suitable than GAA transistors for providing high-voltage transistors, and, therefore, may serve to provide peripheral logic for backend memory arrays implemented over the same support structure over which the GAA transistors and the FinFETs are provided. Such an arrangement may address the fundamental voltage incompatibility by integrating a mix of FinFETs and GAA transistors in stacked complimentary FET (CFET) architecture to enable embedded 1T-1X based memories.