The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2025
Filed:
Jun. 04, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chung-Chi Wen, Taipei, TW;
Yen-Ting Chen, Taichung, TW;
Wei-Yang Lee, Taipei, TW;
Chih-Chiang Chang, Hsinchu County, TW;
Chien-I Kuo, Chiayi County, TW;
Chia-Pin Lin, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method includes forming a semiconductor fin protruding from a substrate, forming a dummy gate structure across the semiconductor fin, recessing a portion of the semiconductor fin in a region adjacent the dummy gate structure to form a recess, growing a semiconductor layer in the recess, and forming a first dielectric layer interposing the semiconductor layer and the dummy gate structure. The semiconductor layer covers at least a portion of the first dielectric layer. The method also includes modifying a shape of the semiconductor layer to expose the portion of the first dielectric layer, depositing a second dielectric layer covering the semiconductor layer and the portion of the first dielectric layer, and replacing the dummy gate structure with a metal gate structure.