The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2025
Filed:
Aug. 09, 2022
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Chun-Hsu Yang, Hsinchu, TW;
Chun-Sheng Chen, Hsinchu, TW;
Nai-Hao Yang, Keelung, TW;
Kuan-Chia Chen, Hsinchu, TW;
Huei-Wen Hsieh, Hsinchu, TW;
Yu-Cheng Hsiao, Taipei, TW;
Che-Wei Tien, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); C23C 14/18 (2006.01); C23C 14/34 (2006.01); H01J 37/34 (2006.01); H01L 21/285 (2006.01); H01L 21/321 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28568 (2013.01); C23C 14/18 (2013.01); C23C 14/34 (2013.01); H01J 37/3244 (2013.01); H01J 37/32633 (2013.01); H01J 37/3426 (2013.01); H01L 21/3212 (2013.01); H01L 21/76831 (2013.01); H01L 21/7684 (2013.01); H01L 21/76846 (2013.01); H01L 21/76853 (2013.01); H01L 21/76877 (2013.01); H01L 21/76882 (2013.01); H01J 2237/002 (2013.01); H01J 2237/332 (2013.01);
Abstract
Interconnect structures and methods and apparatuses for forming the same are disclosed. In an embodiment, a method includes supplying a process gas to a process chamber; igniting the process gas into a plasma in the process chamber; reducing a pressure of the process chamber to less than 0.3 mTorr; and after reducing the pressure of the process chamber, depositing a conductive layer on a substrate in the process chamber.