The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2025
Filed:
Jan. 12, 2024
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Hui-Min Huang, Taoyuan, TW;
Chih-Wei Lin, Zhubei, TW;
Tsai-Tsung Tsai, Taoyuan, TW;
Ming-Da Cheng, Taoyuan, TW;
Chung-Shi Liu, Hsinchu, TW;
Chen-Hua Yu, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/538 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/48 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 21/481 (2013.01); H01L 21/486 (2013.01); H01L 21/56 (2013.01); H01L 21/561 (2013.01); H01L 23/3114 (2013.01); H01L 23/3135 (2013.01); H01L 23/481 (2013.01); H01L 23/49811 (2013.01); H01L 23/49833 (2013.01); H01L 23/49838 (2013.01); H01L 23/49861 (2013.01); H01L 23/49866 (2013.01); H01L 23/5389 (2013.01); H01L 24/07 (2013.01); H01L 24/13 (2013.01); H01L 24/19 (2013.01); H01L 24/96 (2013.01); H01L 24/97 (2013.01); H01L 21/568 (2013.01); H01L 23/49827 (2013.01); H01L 2224/02372 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05083 (2013.01); H01L 2224/05144 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05171 (2013.01); H01L 2224/05184 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/2929 (2013.01); H01L 2224/29386 (2013.01); H01L 2224/83191 (2013.01); H01L 2224/94 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/18162 (2013.01);
Abstract
A first protective layer is formed on a first die and a second die, and openings are formed within the first protective layer. The first die and the second die are encapsulated such that the encapsulant is thicker than the first die and the second die, and vias are formed within the openings. A redistribution layer can also be formed to extend over the encapsulant, and the first die may be separated from the second die.