The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2025
Filed:
May. 03, 2024
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Yaoying Zhong, Singapore, SG;
Siew Kit Hoi, Singapore, SG;
Palaniappan Chidambaram, Singapore, SG;
Jaysen Chiam, Singapore, SG;
Li Ying Choo, Singapore, SG;
Jay Min Soh, Singapore, SG;
Xiao Tan, Singapore, SG;
Haomin Xu, Singapore, SG;
Assignee:
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/50 (2006.01); C23C 14/08 (2006.01); C23C 14/34 (2006.01); C23C 14/54 (2006.01); H01J 37/34 (2006.01);
U.S. Cl.
CPC ...
C23C 14/086 (2013.01); C23C 14/3414 (2013.01); C23C 14/345 (2013.01); C23C 14/50 (2013.01); C23C 14/54 (2013.01); H01J 37/3441 (2013.01); H01J 37/3447 (2013.01);
Abstract
Methods and apparatus for processing a substrate in a process chamber include: positioning a substrate on a substrate support in a process volume so that the substrate is opposite a sputter target comprising indium tin oxide; flowing a plasma-forming gas into the process volume; and sputtering the indium tin oxide onto the substrate while applying AC bias to the substrate.