The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2025
Filed:
May. 06, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
An exemplary semiconductor device includes first spacers disposed along sidewalls of a first gate structure and second spacers disposed along sidewalls of a second gate structure. A source/drain region is disposed between the first gate structure and the second gate structure. A first ILD layer is disposed between the first spacers and the second spacers. A portion of the first ILD layer has a first recessed upper surface. A dielectric layer is disposed over the first spacers, the second spacers, and the first recessed upper surface of the first ILD layer. A portion of the dielectric layer has a second recessed upper surface that is disposed over the portion of the first ILD layer having the first recessed upper surface. A second ILD layer is disposed over the dielectric layer. A contact extends through the second ILD layer, the dielectric layer, and the first ILD layer to the source/drain region.