The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2025
Filed:
Mar. 26, 2024
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Han-Yu Lin, Nantou County, TW;
Chansyun David Yang, Shinchu, TW;
Fang-Wei Lee, Hsinchu, TW;
Tze-Chung Lin, Hsinchu, TW;
Li-Te Lin, Hsinchu, TW;
Pinyen Lin, Rochester, NY (US);
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes forming semiconductor device structure includes a gate stack wrapping around a plurality of nanowire structures. The gate stack includes a first portion above the plurality of nanowire structures and second portions between the nanowire structures. The semiconductor device structure further includes a gate spacer layer along a sidewall of the first portion of the gate stack, and a plurality of inner spacer layers along sidewalls of the second portions of the gate stack. The gate spacer layer has a first carbon concentration, the inner spacer layers have a second carbon concentration, and the second carbon concentration is lower than the first carbon concentration.