The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 12, 2025

Filed:

Nov. 22, 2022
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Julien Frougier, Albany, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Kangguo Cheng, Schenectady, NY (US);

Heng Wu, Santa Clara, CA (US);

Min Gyu Sung, Latham, NY (US);

Chanro Park, Clifton Park, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10B 63/00 (2023.01); H03K 19/173 (2006.01); H03K 19/20 (2006.01); H10B 53/00 (2023.01); H10B 61/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10B 61/22 (2023.02); H03K 19/1733 (2013.01); H03K 19/20 (2013.01); H10B 53/00 (2023.02); H10B 63/34 (2023.02); H10N 70/20 (2023.02);
Abstract

Embodiments of the invention include a transistor coupled to a memory element, the memory element being in series with a first bistable resistive element that is configured to switch between a first low resistance state and a first high resistance state. A logic circuit is coupled to the transistor via a series connection to a second bistable resistive element, the second bistable resistive element being configured to switch between a second low resistance state and a second high resistance state.


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