The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 12, 2025

Filed:

Sep. 01, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chi-Shin Wang, Hsinchu, TW;

Yu-Hsiang Wang, Miaoli, TW;

Wei-Ting Chang, Taichung, TW;

Fan-Yi Hsu, Miaoli, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 21/3213 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/32134 (2013.01); H01L 21/76805 (2013.01); H01L 21/76877 (2013.01); H01L 23/53257 (2013.01); H10D 64/01 (2025.01);
Abstract

Improved control of via anchor profiles in metals at a contact layer can be achieved by slowing down an anchor etching process and by introducing a passivation operation. By first passivating a metallic surface, etchants can be prevented from dispersing along grain boundaries, thereby distorting the shape of the via anchor. An iterative scheme that involves multiple cycles of alternating passivation and etching operations can control the formation of optimal via anchor profiles. When a desirable anchor shape is achieved, the anchor maintains structural integrity of the vias, thereby improving reliability of the interconnect structure.


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