The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2025
Filed:
Oct. 21, 2022
Tokyo Electron Limited, Tokyo, JP;
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
A plasma processing method includes: (a) providing a substrate having an etching target film including a silicon oxide film and a silicon nitride film, and a mask film defining an opening over the etching target film, on a substrate support in a chamber of a plasma processing apparatus; (b) generating a first plasma from a first processing gas including HF gas, CFgas (x and y are integers of 1 or more) or CHFgas (s, t, and u are integers of 1 or more), and an oxygen-containing gas to etch the silicon nitride film; and (c) generating a second plasma from a second processing gas including HF gas, CFgas (v and w are integers of 1 or more), and an oxygen-containing gas to etch the silicon oxide film. In (b) and (c), a temperature of the substrate support is set to 0° C. or lower.