The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 12, 2025

Filed:

Apr. 08, 2022
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Zhepeng Cong, San Jose, CA (US);

Zhiyuan Ye, San Jose, CA (US);

Avinash Ishwar Shervegar, San Jose, CA (US);

Enle Choo, Saratoga, CA (US);

Ala Moradian, Sunnyvale, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/14 (2006.01); C23C 16/44 (2006.01); C23C 16/52 (2006.01); C30B 25/16 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
C30B 25/14 (2013.01); C23C 16/4412 (2013.01); C23C 16/52 (2013.01); C30B 25/16 (2013.01); H01L 21/67017 (2013.01);
Abstract

A method and apparatus for processing semiconductor substrates is described herein. The apparatus includes one or more growth monitors disposed within an exhaust system of a deposition chamber. The growth monitors are quartz crystal film thickness monitors and are configured to measure the film thickness grown on the growth monitors while a substrate is being processed within the deposition chamber. The growth monitors are connected to a controller, which adjusts the heating apparatus and gas flow apparatus settings during the processing operations. Measurements from the growth monitors as well as other sensors within the deposition chamber are used to adjust processing chamber models of the deposition chamber as substrates are processed therein.


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