The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2025
Filed:
Apr. 28, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Cheng-Wei Chang, Taipei, TW;
Shahaji B. More, Hsinchu, TW;
Chi-Yu Chou, Zhubei, TW;
Chun Chieh Wang, Kaohsiung, TW;
Yueh-Ching Pai, Taichung, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Some implementations described herein provide a nanostructure transistor including inner spacers between a gate structure and a source/drain region. The inner spacers, formed in cavities at end regions of sacrificial nanosheets during fabrication of the nanostructure transistor, include concave-regions that face the source/drain region. Formation techniques include forming the sacrificial nanosheets and inner spacers to include certain geometric and/or dimensional properties, such that a likelihood of defects and/or voids within the inner spacers and/or the gate structure are reduced.