The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 05, 2025

Filed:

Nov. 08, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Julien Frougier, Albany, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Heng Wu, Guilderland, NY (US);

Chen Zhang, Guilderland, NY (US);

Alexander Reznicek, Troy, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10D 62/121 (2025.01); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 64/017 (2025.01);
Abstract

A semiconductor device comprising a first nanosheet located on top of a substrate, wherein the first nanosheet is tapered the Y-direction to have a width Wand the first nanosheet is tapered in the X-direction to have a length L. A second nanosheet located on top of the first nanosheet, wherein the second nanosheets is tapered in the Y-direction to have a width Wand the first nanosheet is tapered in the X-direction to have a length L. Wherein the widths Wand Ware different from each other and the lengths Land Lare different from each other and wherein the substrate includes a tapered surface in the Y-direction.


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