The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 05, 2025

Filed:

May. 06, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Ting-Yeh Chen, Hsinchu, TW;

Wei-Yang Lee, Taipei, TW;

Chia-Pin Lin, Xinpu Township, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01); H10D 30/01 (2025.01); H10D 30/69 (2025.01); H10D 62/00 (2025.01); H10D 62/10 (2025.01); H10D 62/17 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6713 (2025.01); H01L 21/0259 (2013.01); H01L 21/3065 (2013.01); H10D 30/0217 (2025.01); H10D 30/031 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 30/797 (2025.01); H10D 62/021 (2025.01); H10D 62/118 (2025.01); H10D 62/371 (2025.01); H10D 64/017 (2025.01); H10D 64/018 (2025.01);
Abstract

A semiconductor device structure and a method for forming a semiconductor device structure are provided. The semiconductor device structure includes a stack of channel structures over a semiconductor fin and a gate stack wrapped around the channel structures. The semiconductor device structure also includes a source/drain epitaxial structure adjacent to the channel structures and an isolation structure surrounding the semiconductor fin. A protruding portion of the semiconductor fin protrudes from a top surface of the isolation structure. The semiconductor device structure further includes an embedded epitaxial structure adjacent to a first side surface of the protruding portion of the semiconductor fin.


Find Patent Forward Citations

Loading…