The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2025
Filed:
Mar. 26, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Tsmc China Company Limited, Shanghai, CN;
Feng Han, Shanghai, CN;
Jian Huang, Shanghai, CN;
Lin-Chun Gui, Shanghai, CN;
Zhong-Hao Chen, Shanghai, CN;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
TSMC CHINA COMPANY LIMITED, Shanghai, CN;
Abstract
A method includes forming a gate structure over a substrate; forming a first gate spacer and a second gate spacer on opposite sidewalls of the gate structure, respectively; implanting a first dopant of a first conductivity type into the substrate form a lightly doped source region adjacent to the first gate spacer, and a lightly doped drain region adjacent to the second gate spacer; forming a patterned mask over a first portion of the lightly doped drain region, while leaving a second portion of the lightly doped drain region exposed; and with the patterned mask in place, implanting a second dopant of the first conductivity type into the substrate, resulting in converting the second portion of the lightly doped drain region into a drain region.