The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 05, 2025

Filed:

Oct. 26, 2018
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Peipei Gao, Tempe, AZ (US);

Xing Lin, Chandler, AZ (US);

Alexandros Demos, Scottsdale, AZ (US);

Chuang Wei, Chandler, AZ (US);

Wentao Wang, Phoenix, AZ (US);

Mingyang Ma, Phoenix, AZ (US);

Prajwal Nagaraj, Tempe, AZ (US);

Assignee:

ASM IP Holding B.V., Almere, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/02 (2006.01); H01J 37/32 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45536 (2013.01); C23C 16/0245 (2013.01); C23C 16/45565 (2013.01); H01J 37/32357 (2013.01); H01J 37/32449 (2013.01); H01J 37/32495 (2013.01); H01L 21/67023 (2013.01); H01J 2237/3321 (2013.01); H01J 2237/3341 (2013.01);
Abstract

A coating and a method to form the coating is proposed for a semiconductor film pre-clean and etch apparatus. The coating may be employed in environments where it is difficult to use a traditional coating or coating method. The coatings provide advantages including: an ability to effectively deliver hydrogen radicals and fluorine radicals to a wafer surface in one apparatus or individually in two apparatuses; a coverage of high aspect ratio features on critical components; an operability in high temperatures exceeding 150° C.; and a protection of a part with high aspect ratio features underneath the coating, thereby preventing metal and particles on a processed wafer.


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